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Title
Graphene formation on step-free 4H-SiC(0001)
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 7, Pages 074307
Publisher
AIP Publishing
Online
2011-10-05
DOI
10.1063/1.3644933
References
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Related references
Note: Only part of the references are listed.- AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC
- (2010) Gyan Prakash et al. CARBON
- Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC
- (2010) M. L. Bolen et al. JOURNAL OF ELECTRONIC MATERIALS
- Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces
- (2010) Satoru Tanaka et al. PHYSICAL REVIEW B
- Dynamic and charge doping effects on the phonon dispersion of graphene
- (2010) Valentin N. Popov et al. PHYSICAL REVIEW B
- 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
- (2010) Y.-M. Lin et al. SCIENCE
- Nucleation of Epitaxial Graphene on SiC(0001)
- (2009) Joshua Robinson et al. ACS Nano
- Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
- (2009) T. Shen et al. APPLIED PHYSICS LETTERS
- Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
- (2009) M. L. Bolen et al. JOURNAL OF ELECTRONIC MATERIALS
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
- (2009) Konstantin V. Emtsev et al. NATURE MATERIALS
- Graphene formation mechanisms on4H-SiC(0001)
- (2009) Michael L. Bolen et al. PHYSICAL REVIEW B
- Step-edge instability during epitaxial growth of graphene from SiC(0001)
- (2009) Valery Borovikov et al. PHYSICAL REVIEW B
- Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation
- (2009) T. M. G. Mohiuddin et al. PHYSICAL REVIEW B
- Subjecting a Graphene Monolayer to Tension and Compression
- (2009) Georgia Tsoukleri et al. Small
- Few-layer graphene on SiC, pyrolitic graphite, and graphene: A Raman scattering study
- (2008) C. Faugeras et al. APPLIED PHYSICS LETTERS
- Top-gated graphene field-effect-transistors formed by decomposition of SiC
- (2008) Y. Q. Wu et al. APPLIED PHYSICS LETTERS
- Epitaxial Graphene Transistors on SiC Substrates
- (2008) Jakub Kedzierski et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Raman Mapping Investigation of Graphene on Transparent Flexible Substrate: The Strain Effect
- (2008) Ting Yu et al. Journal of Physical Chemistry C
- Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2
- (2008) Dong Su Lee et al. NANO LETTERS
- Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
- (2008) A. Das et al. Nature Nanotechnology
- Pit formation during graphene synthesis on SiC(0001):In situelectron microscopy
- (2008) J. B. Hannon et al. PHYSICAL REVIEW B
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