Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

(2009) Seyoung Kim et al.   APPLIED PHYSICS LETTERS

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

(2009) J.S. Moon et al.   IEEE ELECTRON DEVICE LETTERS

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

(2009) Joshua A. Robinson et al.   NANO LETTERS

Insights into few-layer epitaxial graphene growth on4H-SiC(0001¯)substrates from STM studies

(2009) Laura B. Biedermann et al.   PHYSICAL REVIEW B

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

(2008) Y. Xuan et al.   APPLIED PHYSICS LETTERS

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

(2008) Bongki Lee et al.   APPLIED PHYSICS LETTERS

Top-gated graphene field-effect-transistors formed by decomposition of SiC

(2008) Y. Q. Wu et al.   APPLIED PHYSICS LETTERS

Epitaxial Graphene Transistors on SiC Substrates

(2008) Jakub Kedzierski et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene

(2008) J. Hass et al.   PHYSICAL REVIEW LETTERS