Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon
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Title
Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 9, Pages 093507
Publisher
AIP Publishing
Online
2011-11-05
DOI
10.1063/1.3658261
References
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Note: Only part of the references are listed.- IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon
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- The effect of germanium doping on the evolution of defects in silicon
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- (2008) A. Chroneos et al. PHYSICAL REVIEW B
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- (2008) D. J. Backlund et al. PHYSICAL REVIEW B
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