4.6 Article

Growth behavior of nanocrystalline diamond films on ultrananocrystalline diamond nuclei: The transmission electron microscopy studies

Journal

JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 12, Pages -

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AMER INST PHYSICS
DOI: 10.1063/1.3153957

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Micron-crystalline diamond (MCD) films with a unique microstructure were synthesized using a modified nucleation and growth process, in which a thin layer of ultrananocrystalline diamond (UNCD) was used as nucleation layer for growing diamond films in H(2)-plasma. Thus obtained (MCD) UNCD diamond films consist of nanosized diamond clusters (similar to 10 nm in size) surrounding the large diamond grains (similar to 300 nm in size), exhibiting better electron field emission (EFE) properties than the conventional diamond materials with faceted grains. The EFE of these (MCD) UNCD films can be turned on at E(0)=11.1 V/mu m, achieving EFE current density as large as (J(e)) = 0.7 mA/cm(2) at 25 V/mu m applied field, which can be attributed to the presence of large proportion of UNCD grains lying in between the MCD grains, forming an electron conduction path and thus facilitating the EFE process. Transmission electron microscopy examinations reveal that such a unique microstructure was formed by agglomeration and coalescence of the nanosized UNCD grains. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3153957]

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