Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride–tetrafluoroethylene) and Pentacene Thin Films
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Title
Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride–tetrafluoroethylene) and Pentacene Thin Films
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 2S, Pages 02BK06
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.51.02bk06
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Note: Only part of the references are listed.- Influences of Intensity of Electric Field on Properties of Poly(vinylidene fluoride–tetrafluoroethylene) Thin Films during Annealing Process
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- Fabrication of micropatterned ferroelectric gamma poly(vinylidene fluoride) film for non-volatile polymer memory
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- FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell
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- Enhanced Ferroelectric Switching Characteristics of P(VDF-TrFE) for Organic Memory Devices
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- Morphological study on pentacene thin-film transistors: the influence of grain boundary on the electrical properties
- (2010) Fang-Chung Chen et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer
- (2009) Kwang H. Lee et al. APPLIED PHYSICS LETTERS
- Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System
- (2009) Ryousuke Tamura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
- (2009) Sung-Min Yoon et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer
- (2007) L. Mariucci et al. SOLID-STATE ELECTRONICS
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