Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System

Published 2009 View Full Article

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Title
Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 2, Pages 021501
Publisher
Japan Society of Applied Physics
Online
2009-02-20
DOI
10.1143/jjap.48.021501

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