Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell

Fabrication of GaNAs/AlGaAs Heterostructures with Large Band Offset Using Periodic Growth Interruption

(2011) Takaaki Mano et al.   Applied Physics Express

Detailed balance limit of the efficiency of multilevel intermediate band solar cells

(2011) Tomohiro Nozawa et al.   APPLIED PHYSICS LETTERS

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

(2011) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

FABRICATION OF A GaAs/AlGaAs LATTICE-MATCHED QUANTUM DOT SOLAR CELL

(2011) T. NODA et al.   JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS

Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell

(2009) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell

(2009) Ryuji Oshima et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Evolution of valence-band alignment with nitrogen content in GaNAs∕GaAs single quantum wells

(2008) Jun Shao et al.   APPLIED PHYSICS LETTERS

Effect of strain compensation on quantum dot enhanced GaAs solar cells

(2008) S. M. Hubbard et al.   APPLIED PHYSICS LETTERS

Band offset determination of the GaAs/GaAsN interface using the density functional theory method

(2008) H-P Komsa et al.   JOURNAL OF PHYSICS-CONDENSED MATTER