InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell

Published 2009 View Full Article

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Title
InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell
Authors
Keywords
-
Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 42, Issue 10, Pages 2757-2760
Publisher
Elsevier BV
Online
2009-12-29
DOI
10.1016/j.physe.2009.12.036

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