Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Origin of high solubility of silicon in La2O3: A first-principles study

(2010) Naoto Umezawa et al.   APPLIED PHYSICS LETTERS

Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric

(2010) L. Wu et al.   APPLIED PHYSICS LETTERS

Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

(2010) H. Castán et al.   JOURNAL OF APPLIED PHYSICS

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

(2010) K. Kakushima et al.   SOLID-STATE ELECTRONICS

Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric

(2010) K. Kakushima et al.   SOLID-STATE ELECTRONICS

Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices

(2009) E. Cartier et al.   APPLIED PHYSICS LETTERS

Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

(2009) M. V. Fischetti et al.   Journal of Computational Electronics

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

(2008) B. Raeissi et al.   SOLID-STATE ELECTRONICS