Article
Chemistry, Multidisciplinary
Massimo D. Pirnaci, Luca Spitaleri, Dario Tenaglia, Francesco Perricelli, Maria Elena Fragala, Corrado Bongiorno, Antonino Gulino
Summary: Silicon carbide power semiconductors offer more advantages, making SiC an attractive choice for next-generation power electronics. The trench technique increases device density and eliminates the junction field-effect transistor region, reducing specific resistance.
Article
Engineering, Electrical & Electronic
Yang Wen, Yuan Yang, Yong Gao
Summary: High-power SiC MOSFETs are used in power electronics for their high switching speed and low losses. An active gate driver (AGD) is presented to balance currents in parallel-connected SiC MOSFET modules, using dynamic gate drive voltage adjustment to synchronize current edges and slopes. AGDs measure and control current individually, without the need for extra supervising control circuits.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Gard Lyng Rodal, Dimosthenis Peftitsis
Summary: This article presents a novel current-source gate driver for SiC MOSFETS with adaptive functionalities. The proposed driver aims to decouple and improve controllability of di/dt, dv/dt, as well as decrease turn-ON and turn-OFF delay times compared to conventional gate drivers. The performance of the proposed driver is validated experimentally, showing significant reduction in delay times and improved controllability.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Xiaofeng Ding, Xinrong Song, Zhihui Zhao, Zhenyu Shan, Binbin Wang
Summary: This article proposes an active junction temperature control method for SiC MOSFETs based on a resistor-less gate driver. The experimental results show that the proposed method can reduce junction temperature fluctuation, prolong the lifetime of SiC MOSFETs, and decrease energy loss.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2022)
Article
Materials Science, Multidisciplinary
Otto Cranwell Schaeper, Johannes E. Froch, Sejeong Kim, Zhao Mu, Milos Toth, Weibo Gao, Igor Aharonovich
Summary: This study demonstrates the fabrication of functional photonic devices based on 4H Silicon Carbide using a Faraday cage-based oblique angle etch method. The fabricated suspended microring resonators exhibit high-quality factors, showing potential for enhancing the properties of SiC in integrated on chip quantum photonics in the future.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Optics
Xingye Zhou, Yuanjie Lue, Hongyu Guo, Xubo Song, Yuangang Wang, Shixiong Liang, Aimin Bu, Zhihong Feng
Summary: High-stability 4H-SiC avalanche photodiodes (APDs) were fabricated and studied for UV detection at high temperatures. The avalanche breakdown voltage of the devices showed a very small temperature coefficient of 7.4 mV/°C as the temperature increased from room temperature to 150 °C. An accelerated aging test with harsh stress conditions confirmed the stability of 4H-SiC APDs, and the results indicated that the APDs exhibited robust high-temperature performance and could endure over 120 hours at 200 °C/500 μA, making them stable and reliable for high-temperature applications.
CHINESE OPTICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Chen Wu, Xudong Fang, Qiang Kang, Ziyan Fang, Junxia Wu, Hongtao He, Dong Zhang, Libo Zhao, Bian Tian, Ryutaro Maeda, Zhuangde Jiang
Summary: In this study, a MEMS pressure sensor based on 4H-SiC was proposed and demonstrated to operate stably from -50 to 300 degrees C, with good output sensitivity, accuracy, and low temperature coefficient of sensitivity. The sensor also showed excellent resistance to corrosion and radiation, making it suitable for high-temperature and extreme environments.
MICROSYSTEMS & NANOENGINEERING
(2023)
Article
Chemistry, Multidisciplinary
Guanglei Zhong, Xuejian Xie, Desheng Wang, Xinglong Wang, Li Sun, Xianglong Yang, Yan Peng, Xiufang Chen, Xiaobo Hu, Xiangang Xu
Summary: A novel Al doping method using p-type SiC powder was proposed for the growth of p-type SiC crystals. The continuity and utilization rate of Al element were greatly improved by using p-type SiC powder, leading to a significant reduction in resistivity and improvement in resistivity uniformity of the crystals.
Article
Engineering, Electrical & Electronic
Moufu Kong, Jiaxin Guo, Jiacheng Gao, Ke Huang, Bingke Zhang, Bin Wang
Summary: A novel high-performance 1700-V 4H-SiC JFET with reverse recovery capability and low switching loss is proposed in this study. By splitting the gate region and integrating a Schottky barrier diode, the device shows improvements in ON-resistance, capacitance, charge, switching loss, and power consumption. Compared with commercial SiC devices, the proposed JFET demonstrates better reverse recovery performance and reduced switching loss.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Kyoung-Il Do, Jong-Il Won, Yong-Seo Koo
Summary: A novel ESD protection device based on 4H-SiC material was proposed and investigated, showing improved critical electric field, triggering characteristics, and holding voltage compared to traditional silicon-based devices. Experimental results demonstrated good electrical characteristics and stability of the proposed device.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
Xiao Guo, Zeyu Peng, Pengbo Ding, Long Li, Xinyi Chen, Haoyun Wei, Zhen Tong, Liang Guo
Summary: Silicon carbide (SiC), as a leading representative of the third-generation of semiconductors, has excellent physical properties but poses challenges in processing, requiring special techniques such as femtosecond laser machining. SiC shows unprecedented potential for optoelectronic applications, necessitating measurement of its nonlinear optical properties and exploration of its potential applications.
OPTICAL MATERIALS EXPRESS
(2021)
Article
Multidisciplinary Sciences
Sandro Rao, Elisa D. Mallemace, Giuseppe Cocorullo, Giuliana Faggio, Giacomo Messina, Francesco G. Della Corte
Summary: The refractive index and thermo-optic coefficient are important optical parameters for semiconductor materials. 4H-SiC and GaN are excellent materials for high power and high-temperature electronic devices, with wide applications in photonics expected in the near future. The study finds that the thermo-optic coefficient is strongly temperature-dependent for both materials, with a quadratic relationship for GaN and nearly linear relationship for 4H-SiC.
SCIENTIFIC REPORTS
(2022)
Article
Materials Science, Multidisciplinary
Xingliang Xu, Zhiqiang Li, Lin Zhang, Lianghui Li, Kun Zhou, Juntao Li, Jian Zhang
Summary: A multiple-floating-zone-assisted graded-step junction termination extension (MAGS-JTE) is proposed for 4H-silicon carbide (SiC) GTO thyristor, which combines the advantages of two-steps JTE (TS-JTE) and multiple-floating-zone JTE (MFZ-JTE). By varying the implantation dose of each zone, the MAGS-JTE forms a gradual doping profile that effectively suppresses electric field crowding and widens the JTE dose window. The fabricated SiC GTO achieves an ultra-high breakdown voltage of 9.3 kV, reaching about 93% of the theoretical value of 10 kV. The MAGS-JTE structure shows great potential for high-voltage device applications.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Yang He, Xun Wang, Shuai Shao, Junming Zhang
Summary: In this article, a dynamic current balancing method based on a new active gate driver (AGD) is proposed to improve current sharing in parallel applications. The AGD adjusts the gate drive current of SiC mosfets by di/dt feedback control and voltage controlled current source, changing the switching trajectory to achieve current balance. The proposed AGD can be easily used for multiple paralleled devices using a master-slave control strategy. Experimental results show that the proposed AGD effectively reduces the turn-on and turn-off switching energy imbalances in paralleled devices.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Physics, Applied
N. T. Son, D. Shafizadeh, T. Ohshima, I. G. Ivanov
Summary: It has been discovered that divacancies near or at lattice defects in SiC, specifically the PL5-PL7 photoluminescence centers, have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. Using electron paramagnetic resonance, researchers observed PL5, PL6, and four other divacancy-like centers, labeled PLa-PLd, in electron-irradiated high-purity semi-insulating (HPSI) 4H-SiC. The observed centers, including PL6, were found to have C-1h symmetry. Among these centers, PLa, PLc, and PLd are basal divacancies, while PL5 and PL6 slightly deviate from axial symmetry, and PLb is different from others in terms of its D-tensor alignment.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
D. Urciuoli, S. Ryu, D. C. Capell, D. Ibitayo, G. Koebke, C. W. Tipton
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2015)
Article
Physics, Condensed Matter
M. E. Levinshtein, T. T. Mnatsakanov, S. N. Yurkov, A. G. Tandoev, Sei-Hyung Ryu, J. W. Palmour
Article
Engineering, Electrical & Electronic
Heather K. O'Brien, Aderinto A. Ogunniyi, William Shaheen, Sei-Hyung Ryu
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2016)
Article
Engineering, Electrical & Electronic
Kasunaidu Vechalapu, Subhashish Bhattacharya, Edward Van Brunt, Sei-Hyung Ryu, Dave Grider, John W. Palmour
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2017)
Proceedings Paper
Engineering, Electrical & Electronic
Daniel J. Lichtenwalner, Shadi Sabri, Edward van Brunt, Brett Hull, Sei-Hyung Ryu, Philipp Steinmann, Amy Romero, Satyaki Ganguly, Donald A. Gajewski, Scott Allen, John W. Palmour
2020 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW)
(2020)
Article
Materials Science, Multidisciplinary
Daniel J. Lichtenwalner, Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O'Loughlin, Albert A. Burk, Scott T. Allen, John W. Palmouri
Proceedings Paper
Computer Science, Theory & Methods
V. Pala, E. Van Brunt, S. H. Ryu, B. Hull, S. Allen, J. Palmour, A. Hefner
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
(2016)
Proceedings Paper
Engineering, Electrical & Electronic
Aderinto Ogunniyi, Heather O'Brien, Miguel Hinojosa, James Schrock, Shelby Lacouture, Emily Hirsch, Stephen Bayne, Sei-Hyung Ryu
PROCEEDINGS OF THE 25TH BIENNIAL LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC)
(2016)
Proceedings Paper
Engineering, Electrical & Electronic
Edward Van Brunt, David Grider, Vipindas Pala, Sei-Hyung Ryu, Jeff Casady, John Palmour
2015 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP)
(2015)
Proceedings Paper
Energy & Fuels
Kasunaidu Vechalapu, Subhashish Bhattacharya, Edward Van Brunt, Sei-Hyung Ryu, Dave Grider, John W. Palmour
2015 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
(2015)
Proceedings Paper
Energy & Fuels
Vipindas Pala, Adam Barkley, Brett Hull, Gangyao Wang, Sei-Hyung Ryu, Edward Van Brunt, Daniel Lichtenwalner, Jim Richmond, Charlotte Jonas, Craig Capell, Scott Allen, Jeffrey Casady, David Grider, John Palmour
2015 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
(2015)
Proceedings Paper
Energy & Fuels
Arun Kadavelugu, Krishna Mainali, Dhaval Patel, Sachin Madhusoodhanan, Awneesh Tripathi, Kamalesh Hatua, Subhashish Bhattacharya, Sei-Hyung Ryu, David Grider, Scott Leslie
2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015)
(2015)
Proceedings Paper
Computer Science, Hardware & Architecture
Qingchun (Jon) Zhang, Gangyao Wang, Huy Doan, Sei-Hyung Ryu, Brett Hull, Jonathan Young, Scott Allen, John Palmour
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD)
(2015)
Proceedings Paper
Computer Science, Hardware & Architecture
Gangyao Wang, Alex Q. Huang, Fei Wang, Xiaoqing Song, Xijun Ni, Sei-Hyung Ryu, David Grider, Marcelo Schupbach, John Palmour
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD)
(2015)
Proceedings Paper
Computer Science, Hardware & Architecture
T. H. Duong, J. M. Ortiz, D. W. Berning, A. R. Hefner, S. -H. Ryu, J. W. Palmour
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD)
(2015)
