期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 29, 期 2, 页码 539-542出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2013.2271906
关键词
Gate buffer; gate driver; high-temperature electronics; silicon carbide (SiC); 4H-SiC
资金
- Advanced Research Projects Agency Energy (ARPA-E), U.S. Department of Energy [DE-AR-0000111]
A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.
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