Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs

Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs

(2012) F. Conzatti et al.   IEEE ELECTRON DEVICE LETTERS

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

(2012) F. Conzatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Defect states at III-V semiconductor oxide interfaces

(2011) L. Lin et al.   APPLIED PHYSICS LETTERS

Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

(2010) Lingquan Wang et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

(2010) J. Knoch et al.   IEEE ELECTRON DEVICE LETTERS

Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications

(2010) Matthias Passlack et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

(2009) S. Poli et al.   IEEE ELECTRON DEVICE LETTERS

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

(2009) Mathieu Luisier et al.   IEEE ELECTRON DEVICE LETTERS

Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k⋅p method

(2009) Mincheol Shin   JOURNAL OF APPLIED PHYSICS

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

(2009) K Rogdakis et al.   NANOTECHNOLOGY

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

(2008) Siyuranga O. Koswatta et al.   APPLIED PHYSICS LETTERS

Nanometer Device Scaling in Subthreshold Logic and SRAM

(2008) Scott Hanson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES