Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

Title
Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 3, Pages 1272-1275
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-02-16
DOI
10.1109/ted.2013.2240457

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