Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

Published 2011 View Full Article

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Title
Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2
Authors
Keywords
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Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 158, Issue 8, Pages G178
Publisher
The Electrochemical Society
Online
2011-06-14
DOI
10.1149/1.3599065
References
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