Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

Physicochemical and Electrical Properties of LaLuO[sub 3]/Ge(100) Structures Submitted to Postdeposition Annealings

(2010) C. Radtke et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Desorption kinetics of GeO from GeO2/Ge structure

(2010) Koji Kita et al.   JOURNAL OF APPLIED PHYSICS

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

(2009) Takuji Hosoi et al.   APPLIED PHYSICS LETTERS

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

(2009) Akira Toriumi et al.   MICROELECTRONIC ENGINEERING

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

(2007) F. Bellenger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY