On the Enhancement of the Drain Current in Indium-Rich InGaAs Surface-Channel MOSFETs

Analysis of Electron Mobility in Inversion-Mode $ \hbox{Al}_{2}\hbox{O}_{3}/\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ MOSFETs

(2011) Weike Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interface-Trap Effects in Inversion-Type Enhancement-Mode $\hbox{InGaAs/ZrO}_{2}$ N-Channel MOSFETs

(2010) Luca Morassi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs

(2010) W.C. Kao et al.   SOLID-STATE ELECTRONICS

Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates

(2010) Md. Mahbub Satter et al.   SOLID-STATE ELECTRONICS

A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates

(2010) Md. Mahbub Satter et al.   SOLID-STATE ELECTRONICS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

A Physics-Based Compact Model of III–V FETs for Digital Logic Applications: Current–Voltage and Capacitance–Voltage Characteristics

(2009) Saeroonter Oh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A