EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

(2011) L.-Å. Ragnarsson et al.   MICROELECTRONIC ENGINEERING

Characterization of Inversion-Layer Capacitance of Electrons in High- $k$/Metal Gate Stacks

(2010) Ryosuke Iijima et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- $k$ Gate Stacks

(2010) Gennadi Bersuker et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

(2010) K. Kakushima et al.   SOLID-STATE ELECTRONICS

Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film

(2009) K. Kakushima et al.   JOURNAL OF APPLIED PHYSICS

Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes

(2009) Changhwan Choi et al.   MICROELECTRONIC ENGINEERING