Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain

Published 2014 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 11, Pages 1088-1090
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-10-02
DOI
10.1109/led.2014.2357429

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.