Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain

标题
Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 11, Pages 1088-1090
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-10-02
DOI
10.1109/led.2014.2357429

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