Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer

Published 2014 View Full Article

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Title
Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1260-1262
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-10-30
DOI
10.1109/led.2014.2363879

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