Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 35, Issue 12, Pages 1260-1262

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-10-30

DOI

10.1109/led.2014.2363879

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