Self-Aligned Bottom-Gate In—Ga—Zn—O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride

Published 2014 View Full Article

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Title
Self-Aligned Bottom-Gate In—Ga—Zn—O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 9, Pages 933-935
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-07-31
DOI
10.1109/led.2014.2336880

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