Self-Aligned Bottom-Gate In—Ga—Zn—O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 35, Issue 9, Pages 933-935

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-07-31

DOI

10.1109/led.2014.2336880

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