4.6 Article

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 1, Pages 33-35

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2291854

Keywords

GaN; inverter; DCFL; small variations

Funding

  1. National Natural Science Foundation of China [60406004, 60890193, 60736033, 4112025]
  2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication

Ask authors/readers for more resources

High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 degrees C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 degrees C, the fabricated inverter operates properly at a supply voltage (V-DD) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V-TH), 2.4 V for logic-low noise margin (NML), and 3.4 V for logic-high noise margin (NMH). Meanwhile, the inverter exhibits small variations from RT to 300 degrees C in terms of logic voltage swing, V-TH, NML, and NMH with the maximum relative variations of 2.2%, 5.7%, 12.9%, and 4.9% in such temperature range, respectively.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Physics, Condensed Matter

Influence of Mg Out-Diffusion Effect on the Threshold Voltage of GaN-Based p-Channel Heterostructure Field-Effect Transistors

Xuerui Niu, Xiaohua Ma, Meng Zhang, Ling Yang, Bin Hou, Mei Wu, Fuchun Jia, Xinchuang Zhang, Chong Wang, Yue Hao

Summary: This article explores a promising solution for resolving parasitic problems and fully leveraging the advantages of GaN-based high electron mobility transistors through monolithic integration of different function blocks. It focuses on the enhancement mode GaN-based p-channel heterostructure field-effect transistor (p-HFET) as a key component and models the threshold voltage (V-TH) while investigating the influence of Mg out-diffusion effect. The study takes into consideration factors such as Mg diffusion coefficient, Mg concentration in the p-GaN layer, thicknesses of the AlGaN layer, p-GaN channel layer, and oxide layer to systematically explore their impact on V-TH. The analysis reveals that lower Mg concentration, smaller diffusion coefficient, and thinner p-GaN channel and AlGaN layers facilitate the realization of E-mode p-HFETs. It also suggests a heterostructure with two p-GaN layers of different concentrations to simplify the etching technique while improving ohmic contacts. Overall, this model effectively guides the design of GaN-based E-mode p-HFETs.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2023)

Article Computer Science, Information Systems

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light

Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao

Summary: This study investigates the negative shift of threshold voltage and degradation of leakage current in a Si3N4/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor under UV light. The increase in leakage current is observed due to the capture of holes generated by UV illumination, while blue light and darkness do not have the same effect. Simulation results show that the trapped holes significantly increase the electric field strength in Si3N4.

SCIENCE CHINA-INFORMATION SCIENCES (2023)

Article Engineering, Electrical & Electronic

600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Junjie Yang, Jin Wei, Yanlin Wu, Muqin Nuo, Zhenghao Chen, Xuelin Yang, Maojun Wang, Bo Shen

Summary: A 600-V p-GaN gate HEMT with a buried hole spreading channel (BHSC) is demonstrated to suppress the buffer trap related dynamic R-ON degradation. The BHSC, located between u-GaN and buried AlGaN, enables effective spreading of holes along its channel to screen the negative buffer charges injected from the gate. This spreading effect is verified by detection of hole current from the sidewall of BHSC. The proposed device exhibits immunity against buffer trapping, as demonstrated by a positive substrate stress test, achieving nearly zero buffer trap related dynamic R-ON degradation even after a 400-V substrate stress with a delay as short as approximately 20 μs.

IEEE ELECTRON DEVICE LETTERS (2023)

Article Engineering, Electrical & Electronic

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Yanlin Wu, Jin Wei, Maojun Wang, Muqin Nuo, Junjie Yang, Wei Lin, Zheyang Zheng, Li Zhang, Mengyuan Hua, Xuelin Yang, Yilong Hao, Kevin J. Chen, Bo Shen

Summary: The active-passivation pGaN gate HEMT (AP-HEMT) is demonstrated on a commercial E-mode pGaN/AlGaN/GaN heterostructure wafer. The active passivation layer effectively shields the surface traps and improves the dynamic R-on. Compared to the conventional HEMT, the AP-HEMT has a significantly lower dynamic R-on under V-DS stress.

IEEE ELECTRON DEVICE LETTERS (2023)

Article Engineering, Electrical & Electronic

Effects of Neutron Irradiation on Electrical Performance of β-Ga2O3 Schottky Barrier Diodes

Shaozhong Yue, Xuefeng Zheng, Yuehua Hong, Xiangyu Zhang, Fang Zhang, Yingzhe Wang, Xiaohua Ma, Yue Hao

Summary: This study investigates the effect of neutron irradiation on the electrical performance of the beta-Ga2O3 Schottky barrier diode (SBD) device. The results show that after neutron irradiation, there is a decrease in forward current density (J(F)), reduction in reverse current density (J(R)), and increase in breakdown voltage (V-br) based on current-voltage (I-V) measurements. The density of interface states slightly increases, and there is an increase in trap activation energy after neutron irradiation according to frequency-dependent conductance technique. The carrier concentration across the Ga2O3 drift layer decreases after neutron irradiation based on capacitance-voltage (C-V) measurements.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

Article Immunology

Identifying autophagy-related genes as potential targets for immunotherapy in tuberculosis

Sifang Xiao, Ting Zhou, Jianhua Pan, Xiaohua Ma, Guomin Shi, Binyuan Jiang, Yan-gen Xiang

Summary: This study found a correlation between autophagy and immune infiltration in tuberculosis, and identified FOXO1 as a potential gene target for TB immunotherapy. These findings provide new insights into diagnostic and immuno-therapy strategies for clinical tuberculosis.

INTERNATIONAL IMMUNOPHARMACOLOGY (2023)

Article Biotechnology & Applied Microbiology

N6-methyladenosine RNA modification regulates cotton drought response in a Ca2+ and ABA-dependent manner

Baoqi Li, Mengmeng Zhang, Weinan Sun, Dandan Yue, Yizan Ma, Boyang Zhang, Lingfeng Duan, Maojun Wang, Keith Lindsey, Xinhui Nie, Xianlong Zhang, Xiyan Yang

Summary: N-6-methyladenosine (m(6)A) is a common modification in mRNAs and plays a role in drought stress response in cotton. The study found that m(6)A levels change significantly under drought stress, and higher levels of m(6)A are associated with increased mRNA abundance and drought resistance. The demethylase GhALKBH10B regulates m(6)A levels and affects the mRNA decay of ABA and Ca2+ signal-related genes, while mutation of GhALKBH10B enhances drought resistance in cotton seedlings. Silence of Ca2+-related genes GhECA1 and GhCNGC4 reduces drought resistance by decreasing m(6)A enrichment.

PLANT BIOTECHNOLOGY JOURNAL (2023)

Review Biology

A comprehensive overview of cotton genomics, biotechnology and molecular biological studies

Xingpeng Wen, Zhiwen Chen, Zuoren Yang, Maojun Wang, Shuangxia Jin, Guangda Wang, Li Zhang, Lingjian Wang, Jianying Li, Sumbul Saeed, Shoupu He, Zhi Wang, Kun Wang, Zhaosheng Kong, Fuguang Li, Xianlong Zhang, Xiaoya Chen, Yuxian Zhu

Summary: Cotton is an economic crop with elongated fiber cells that have been extensively studied in terms of multi-genome assembly, genome editing, fiber development mechanism, and metabolite biosynthesis. Research has revealed the origin of cotton species, asymmetric chromatin structure in fibers, and the role of candidate genes in fiber development. The synthesis of secondary metabolites, resistance to diseases, and plant architecture regulation have also been investigated. This review summarizes the important achievements in cotton molecular biology and provides theoretical support for future research.

SCIENCE CHINA-LIFE SCIENCES (2023)

Review Chemistry, Multidisciplinary

Memristor-Based Signal Processing for Compressed Sensing

Rui Wang, Wanlin Zhang, Saisai Wang, Tonglong Zeng, Xiaohua Ma, Hong Wang, Yue Hao

Summary: This article systematically presents the requirements, mechanisms, and implementation methods of memristor-based compressed sensing (CS) technology, as well as its potential in all-in-one compression and encryption. The article points out the lack of a comprehensive overview of memristor-based CS techniques.

NANOMATERIALS (2023)

Article Clinical Neurology

Case report: A longitudinal study of an unusual rapidly progressive dementia case

Xiaoyan Liu, Ziqi Fan, Xuanyu Chen, Yanyan Zhang, Fangping He, Xiaohua Ma, Qing Ke

Summary: This article presents a rare case of anti-IgLON5 disease, a novel autoimmune encephalopathy, in a patient with rapidly progressive dementia (RPD). The patient exhibited overlapping sleep dysfunction, psychosis, and abnormal movement. The study highlights the importance of considering anti-IgLON5 disease as a potential differential diagnosis in RPD patients, and suggests that early initiation of immunotherapy may not yield favorable outcomes.

FRONTIERS IN NEUROLOGY (2023)

Article Polymer Science

Remarkably Improved Gas Separation Performance of Polyimides by Forming Bent and Battered Main Chain Using Paracyclophane as Building Block

Lu-Jun Huang, Ya-Tao Weng, Aqib Raiz, Zhi-Jie Mao, Xiao-Hua Ma

Summary: In this study, two intrinsic microporous polyimides (6FPCA and 6FMCA) with high permeability, selectivity, and stability were successfully constructed. These polyimides were derived from two isometric diamines (PCA and MCA) and exhibited a hollow beaded structure with a specified window size. Compared to the corresponding polyimide with a plane structure, these polyimides showed larger microporosity, higher permeability, and minimal decrease in selectivity. This study demonstrates that incorporating the paracyclophane subunit into polymers can enhance their ultra-microporosity and separation properties.

CHINESE JOURNAL OF POLYMER SCIENCE (2023)

Article Engineering, Chemical

Evading the permeance-selectivity trade-off dilemma in electrospray-assisted interfacial polymerization polyamide thin-film composite membrane through electrospinning nanofibers interlayer

Jia-Hao Liu, Fei Xie, Han-Zhuo Ding, Jia-Wei Mo, Xiao-Gang Jin, Xiao-Hua Ma, Zhen-Liang Xu

Summary: This study introduces chitosan (CS) nanofibers interlayer to optimize the substrate and improve the separation performance of thin-film composite (TFC) membranes. The introduction of CS nanofibers prevents polyamide invasion, promotes interfacial polymerization (IP) reaction, and enhances the hydrophilicity of the membrane. The TFC/CS/PES membrane shows excellent separation performance with a 4.5 times increase in permeance and a high MgCl2 rejection rate. This work provides a new strategy for substrate optimization and membrane improvement.

DESALINATION (2023)

Article Chemistry, Physical

Multi-functional MXene quantum dots enhance the quality of perovskite polycrystalline films and charge transport for solar cells

Junli Nie, Bingqiang Niu, Yijin Wang, Zhang He, Xingmao Zhang, HuanHuan Zheng, Yimin Lei, Peng Zhong, Xiaohua Ma

Summary: This study focuses on the synthesis of zero-dimensional MXene quantum dots (MQDs) and their incorporation into perovskite solar cells (PSCs). The MQDs demonstrate unique optical properties and display multi-functionality when incorporated into the SnO2 electron transport layer of PSCs. This results in improved charge transport, reduced nonradiative recombination, increased power conversion efficiency, and enhanced stability of the devices.

JOURNAL OF COLLOID AND INTERFACE SCIENCE (2023)

Article Engineering, Chemical

Excellent high-temperature proton exchange membrane fuel cell derived from a triptycene-based polybenzimidazole with low N-H density and high phosphate tolerance

Qing Ju, Hongying Tang, Hao Dong, Kang Geng, Huidong Qian, Xiaohua Ma, Nanwen Li

Summary: A novel triptycene-based polybenzimidazole (Trip-PBI) material was obtained for the first time and used as a PEM or binder in high-temperature proton exchange membrane fuel cells (HT-PEMFC). By using Trip-PBI as a binder, the issues of gas transfer restriction and excessive PA diffusion in the PEM to the catalysis layer have been successfully addressed. As a result, the MEA with Trip-PBI as the binder exhibits a maximum power density of 700 mW/cm2 at 160 degrees C, which is 1.84 times that of m-PBI and 1.36 times that of PTFE. Moreover, the H2/O2 cell using Trip-PBI binder also shows good stability for 100 h at 160 degrees C with a current density of 0.3 A/cm2.

JOURNAL OF MEMBRANE SCIENCE (2023)

Article Engineering, Chemical

Carbon molecular sieve membranes fabricated at low carbonization temperatures with novel polymeric acid porogen for light gas separation

Hongfang Guo, Jing Wei, Yulei Ma, Zikang Qin, Xiaohua Ma, Roman Selyanchyn, Bangda Wang, Xuezhong He, Bo Tang, Lin Yang, Lu Yao, Wenju Jiang, Yuanfa Zhuang, Dengguo Yin, Xue Li, Zhongde Dai

Summary: The use of a novel porogen in the precursor of the Troger's base polymer allows for the reduction of carbonization temperature, leading to the fabrication of carbon molecular sieve membranes with high gas permeability and selectivity.

SEPARATION AND PURIFICATION TECHNOLOGY (2023)

No Data Available