Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

标题

作者

关键词

出版物

Volume 35, Issue 7, Pages 723-725

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-05-30

DOI

10.1109/led.2014.2322379

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