☆ 4.6 Article

Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

IEEE ELECTRON DEVICE LETTERS (2013)

Journal

IEEE ELECTRON DEVICE LETTERS

Volume 34, Issue 12, Pages 1494-1496

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/LED.2013.2286173

Keywords

Current collapse; dynamic ON-resistance; electron trap; field plate; hot electron; p-GaN gate high-electron-mobility transistor (HEMT)

Categories

Engineering, Electrical & Electronic

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Abstract

This letter studies the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors. It is found that channel hot electrons play a major role in increasing the current collapse and that adding a field plate significantly reduces the effect. By stressing the device with OFF-state pulses of 100 mu s x 10 mu s with a V-GS rise/fall time of 10 ns at V-dc 400 V, compared to the ON-resistance before stress, the ON-resistance was 78 times larger after stress without field plates. With a field plate, it was only 1.8 times larger.

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