Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device

Authors

Keywords

Journal

Volume 33, Issue 4, Pages 483-485

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2012-03-06

DOI

10.1109/led.2012.2185212

References

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