AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction

(2011) Han Zhao et al.   APPLIED PHYSICS LETTERS

Ultrathin body InAs tunneling field-effect transistors on Si substrates

(2011) Alexandra C. Ford et al.   APPLIED PHYSICS LETTERS

Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

(2010) Lingquan Wang et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide

(2010) Han Zhao et al.   IEEE ELECTRON DEVICE LETTERS

On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

(2010) Siyuranga O. Koswatta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE