InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

(2012) Rui Li et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities

(2011) Dheeraj Mohata et al.   Applied Physics Express

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

(2011) Guangle Zhou et al.   IEEE ELECTRON DEVICE LETTERS

InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides

(2011) H. Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

(2010) Saurabh Mookerjea et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

(2010) J. Knoch et al.   IEEE ELECTRON DEVICE LETTERS

Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

(2010) Hock-Chun Chin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE