4.6 Article

Ultrahigh ON/OFF-Current Ratio for Resistive Memory Devices With Poly(N-Vinylcarbazole)/Poly(3, 4-Ethylenedioxythiophene)-Poly(Styrenesulfonate) Stacking Bilayer

期刊

IEEE ELECTRON DEVICE LETTERS
卷 32, 期 3, 页码 387-389

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2099102

关键词

Nanoparticle (NP); organic memory; poly(N-vinylcarbazole) (PVK); poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS); resistive memory

资金

  1. National Science Council of Taiwan [NSC-96-2628-E-006-013-MY3]
  2. National Cheng Kung University [A0051]
  3. Applied Materials Taiwan

向作者/读者索取更多资源

An ultrahigh ON/OFF-current ratio of 5 x 10(9) is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK)and poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the ON/OFF-current ratio cannot be achieved by simply increasing the thickness of the PVK: Au NPs layer itself. This PVK: Au-NPs/PEDOT-PSS stacking-bilayer memory device also demonstrates good retention of high ON/OFF-current ratio for at least 2 h and remains programmable at 125 degrees C.

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