N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications

X-band power performance of N-face GaN MIS-HEMTs

(2011) M.H. Wong et al.   ELECTRONICS LETTERS

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications

(2010) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors

(2010) David F. Brown et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

(2009) B. L. Swenson et al.   JOURNAL OF APPLIED PHYSICS

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

(2008) J.S. Moon et al.   IEEE ELECTRON DEVICE LETTERS