期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 7, 页码 862-864出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2148091
关键词
Contact resistance; FinFETS; semiconductor-insulator interfaces; semiconductor-metal interfaces
资金
- FUSION-Texas ETF
Recent experiments have demonstrated the ability to alleviate Fermi-level pinning, resulting in reduced Schottky barrier heights (SBHs) and reduced contact resistivity by inserting thin layers of dielectric at the contact interface. In this letter, FinFETs with dielectric SBH tuning layers are investigated and shown to have reduced contact resistance over the control wafer. The reduced contact resistivity results in an approximate to 25% increase in drive current as well as a reduction of R-S/D by 100 Omega . mu m. Contact chain measurement shows a 10-Omega . mu m(2) reduction in specific contact resistivity over the control wafer associated with a 100-meV reduction in SBH. Routes to further improvements in device performance are discussed, including key material considerations for dielectric tuning layers.
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