On the Electron and Hole Tunneling in a $ \hbox{HfO}_{2}$ Gate Stack With Extreme Interfacial-Layer Scaling

Published 2011 View Full Article

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Title
On the Electron and Hole Tunneling in a $ \hbox{HfO}_{2}$ Gate Stack With Extreme Interfacial-Layer Scaling
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 865-867
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-05-21
DOI
10.1109/led.2011.2146751
References
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