Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs

Published 2010 View Full Article

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Title
Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 9, Pages 2098-2105
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-08-04
DOI
10.1109/ted.2010.2054455

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