GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs

(2009) Arnaud Pouydebasque et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique

(2009) L. Souriau et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

(2008) C. Le Royer et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

(2008) Jia Feng et al.   IEEE ELECTRON DEVICE LETTERS

Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

(2008) Stephen W. Bedell et al.   IEEE ELECTRON DEVICE LETTERS

High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants

(2008) G. Hellings et al.   IEEE ELECTRON DEVICE LETTERS