High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique

Published 2009 View Full Article

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Title
High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique
Authors
Keywords
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Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 156, Issue 3, Pages H208
Publisher
The Electrochemical Society
Online
2009-01-31
DOI
10.1149/1.3065199
References
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