Single and Multiple Oxygen Vacancies in Ultrathin $ \hbox{SiO}_{2}$ Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation
Single and Multiple Oxygen Vacancies in Ultrathin $ \hbox{SiO}_{2}$ Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation
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