InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

标题

作者

关键词

出版物

Volume 30, Issue 11, Pages 1131-1133

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2009-10-10

DOI

10.1109/led.2009.2031659

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