Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics
Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics
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