Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics
Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreDiscover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversation