AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

出版年份 2008 全文链接

标题

作者

关键词

出版物

Volume 29, Issue 8, Pages 838-840

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-07-30

DOI

10.1109/led.2008.2000949

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