Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Published 2008 View Full Article

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Journal

IEEE ELECTRON DEVICE LETTERS

Volume 29, Issue 8, Pages 902-905

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2008-07-30

DOI

10.1109/led.2008.2000876

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IEEE ELECTRON DEVICE LETTERS

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