Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

出版年份 2008 全文链接

标题

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

作者

关键词

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出版物

IEEE ELECTRON DEVICE LETTERS

Volume 29, Issue 8, Pages 902-905

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-07-30

DOI

10.1109/led.2008.2000876

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