Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

Title
Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 5, Pages 518-521
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-04-29
DOI
10.1109/led.2008.920267

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