Article
Engineering, Electrical & Electronic
Jung-Woo Lee, Joon-Kyu Han, Myung-Su Kim, Ji-Man Yu, Jin-Woo Jung, Seong-Yun Yun, Yang-Kyu Choi
Summary: The endurance to cyclic program/erase (P/E) of a gate-all-around (GAA)-based junctionless (JL) silicon flash memory was improved by the Joule heat generated from the inherent nanowire current. The increased temperature resulting from the Joule heat was utilized to cure the damage caused by repetitive P/E operations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Sung-Kun Park, Tae-Ho Lee, Young-Jun Kwon, Chang-Su Park, In-Wook Cho, Sung-Joo Hong, Hoon-Sang Oh, Kyung-Dong Yoo, Young-Dong Joo, Jun-Ho Lee, Seung-Deok Kim
Summary: A 32 kB embedded nonvolatile memory (NVM) IP using 2T-SONOS cells was developed, but abnormal memory cell failure was discovered during probe testing, mainly due to insufficient G-S disturbance immunity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Jung-Woo Lee, Joon-Kyu Han, Ji-Man Yu, Geon-Beom Lee, Il-Woong Tcho, Yang-Kyu Choi
Summary: This study reveals that the endurance to cyclic program/erase (P/E) in a gate-all-around (GAA)-based SONOS flash memory device can be improved by Joule heat generated by the gate-induced drain leakage (GIDL) current (I-GIDL). Through COMSOL simulation and experimental analysis, it is found that the induced temperature (T) by I-GIDL is higher in the GAA device with ONO gate dielectrics compared to the one with a thermal gate oxide, enabling effective damage curing and enhancing device performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Computer Science, Hardware & Architecture
Hao Zhang, Huichuan Zheng, Shuangliang Li, Yuhao Zhang, Mengying Zhao, Xiaojun Cai
Summary: This article introduces a pattern-aware wear leveling mechanism to improve the lifetime problem in nonvolatile FPGA platforms. Compared to existing static analysis methods, this mechanism improves lifetime through adaptive reconfiguration, with higher lifetime improvement and lower performance overhead.
JOURNAL OF SYSTEMS ARCHITECTURE
(2022)
Article
Engineering, Electrical & Electronic
T. Patrick Xiao, Christopher H. Bennett, Sapan Agarwal, David R. Hughart, Hugh J. Barnaby, Helmut Puchner, A. Alec Talin, Matthew J. Marinella
Summary: We investigated the sensitivity of silicon-oxide-nitride-silicon-oxide (SONOS) charge trapping memory technology to heavy-ion induced single-event effects. The changes in the threshold voltage (V-T) distribution of SONOS cells were analyzed after irradiation with Kr and Ar ion beams. It was observed that direct ion strikes did not significantly affect the V-T distribution, but cells in the vicinity of ion absorption experienced a shift in V-T. These results provide new insights into the physical mechanisms underlying the V-T shift in scaled charge trap memory induced by a single heavy ion.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Devin Verreck, Franz Schanovsky, Antonio Arreghini, Geert Van den Bosch, Zlatan Stanojevic, Markus Karner, Maarten Rosmeulen
Summary: This article investigates the physical modeling of the charge trap layer in flash memory and proposes two models: the full TCAD model and the semianalytical model Pheido. Through experimental results and comparative analysis, the effectiveness and applicability of these two models are demonstrated, and the impact of material and structural parameters on memory performance is explored.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Computer Science, Hardware & Architecture
Huichuan Zheng, Hao Zhang, Shuo Xu, Fanjin Xu, Mengying Zhao
Summary: This article proposes a wear leveling scheme to improve the lifetime of MLC-based nonvolatile FPGAs by dynamically transforming write-heavy MLC regions to durable SLC mode. The evaluation shows a significant improvement in lifetime with a moderate increase in storage overhead.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Si-Meng Chen, Jing-Yuan Wu, Nhan-Ai Tran, Edward Yi Chang
Summary: This article investigates the electrical properties of In0.53Ga0.47 As gate-all-around (GAA) MOS-FETs with different nanowire shapes. InGaAs GAA MOS-FETs with trapezoid and triangle nanowire shapes were fabricated and characterized. It was observed that the output performance improved as the nanowire top width reduced from 20 to 11 nm, but degraded when the nanowire top width decreased to nearly 0 nm. TCAD simulation was performed to study the electron density distribution for different nanowire widths and explain the carrier transport mechanism in these ultralow-scale transistor devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Rishu Chaujar, Mekonnen Getnet Yirak
Summary: In this study, a junctionless gate all around silicon nanowire field-effect transistor (JL-GAA-SiNWFET) sensor was used to detect hydrogen gas (H-2). The sensor showed satisfactory characteristics for safety in handling hydrogen and selectivity in monitoring H-2 among other gases. The shifts in threshold voltage (V-th), Ion, and Ioff due to changes in the palladium (Pd) gate work function make it a sensitive parameter for detecting H-2 gas molecules. The results revealed that JL-GAA-SiNWFET-based sensors had improved sensitivity compared to GAA-MOSFET and MOSFET.
Article
Chemistry, Analytical
Md Ashfaque Hossain Khan, Ratan Debnath, Abhishek Motayed, Mulpuri Rao
Summary: A TiO2-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed to address the cross-sensitive nature of metal oxides, with a Si back gate and C-AlGaN gate dielectric as tunable parameters to enhance discrimination of gases. The results showed a significant increase in NO2 response with back-gate bias, while SO2 response increased insignificantly, explained by a band diagram based on density functional theory (DFT) molecular models.
Article
Engineering, Electrical & Electronic
Bin Lu, Dawei Wang, Yan Cui, Zhu Li, Guoqiang Chai, Linpeng Dong, Jiuren Zhou, Guilei Wang, Yuanhao Miao, Zhijun Lv, Hongliang Lu
Summary: The nanowire gate-all-around structure demonstrates superior performance in terms of short channel effects and scaling capability. Development of tunneling current and capacitance models for nanowire FETs has facilitated circuit-level simulations, confirming the efficiency and compatibility of the models. The successful implementation of the models in circuit simulators validates their usefulness for further exploration of nanowire-based TFET circuits.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Jiyou Jin, Chuanchao Zhu, Yanrong Wang, Zhongpu Wang, Zhisheng Peng, Kang Peng, Hui Liu, Haonan Wei, Weiguo Chu, Weimin Fan, Yong Jun Li, Lianfeng Sun
Summary: A multilevel optoelectronic NVM based on multilayer disulfide is designed and investigated, showing extraordinary storage capability and stable erasing property under laser illumination.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Masaya Mochizuki, Masayuki Yamamoto, Hitoshi Umezawa, Yasunori Tanaka
Summary: Although silicon carbide integrated circuits (SiC ICs) have remarkable heat and radiation tolerances, the lack of performance in transistors is a significant hurdle to their widespread commercialization. This study focuses on improving transistors' performance by fabricating n-type lateral SiC JFETs with gate-all-around (GAA) structures. The results show that the GAA JFETs have high transconductance coefficients and little body bias effect, which makes them suitable for IC applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Jae Hur, Dongsuk Kang, Dong-Il Moon, Ji-Man Yu, Yang-Kyu Choi, Shimeng Yu
Summary: Cryogenic computing has gained attention for its applications in cloud computing, aerospace electronics, and quantum computing. This study introduces a cryogenic storage memory based on a charge-trap mechanism, which aims to achieve high-speed and low-power operation in a cryogenic environment. The experimental demonstration of a FinFET-structured cryogenic storage device shows improved retention and high-speed operation at 77 K. Benchmark simulation of an interface between a host microprocessor and solid-state-drive further confirms the significant improvements in latency and power of the cryogenic storage system compared to conventional cryogenic NAND flash.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Timofey V. Perevalov, Andrei A. Gismatulin, Vladimir A. Gritsenko, Igor' P. Prosvirin, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder
Summary: Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures in nonvolatile memory cells, and experiments show that the conductivity is bipolar with electrons injected from a negatively biased contact and holes injected from a positively biased electrode.
APPLIED PHYSICS LETTERS
(2021)
Article
Geriatrics & Gerontology
Giulio E. Lancioni, Nirbhay N. Singh, Mark F. O'Reilly, Jeff Sigafoos, Fiora D'Amico, Dominga Laporta, Maria Giovanna Cattaneo, Antonella Scordamaglia, Katia Pinto
AMERICAN JOURNAL OF ALZHEIMERS DISEASE AND OTHER DEMENTIAS
(2018)
Review
Food Science & Technology
Balwinder Singh, Jatinder Pal Singh, Amritpal Kaur, Narpinder Singh
INTERNATIONAL JOURNAL OF FOOD SCIENCE AND TECHNOLOGY
(2018)
Article
Food Science & Technology
Shalini Trehan, Narpinder Singh, Amritpal Kaur
JOURNAL OF FOOD SCIENCE AND TECHNOLOGY-MYSORE
(2018)
Article
Chemistry, Multidisciplinary
Sanyog Sharma, Balkaran Singh Sran, Narinder Singh, Geeta Hundal
Article
Chemistry, Multidisciplinary
Meenakshi Verma, Amanpreet Kaur, Harpreet Kaur, Navneet Kaur, Narinder Singh
Article
Engineering, Electrical & Electronic
Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Jagoda Dobrzynska, Jan Vobecky, Carlo Tosi
Summary: An electroactive passivation for high-voltage diodes with bevel termination using DLC films has been investigated. The influence of DLC properties on diode leakage current and breakdown voltage was studied through experiments and numerical simulations. The polarization effect in DLC material was observed, improving its performance as a passivation material.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Federico Giuliano, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Mattia Rossetti, Riccardo Depetro, Giuseppe Croce
Summary: A TCAD approach was used to investigate charge transport in thick amorphous silicon dioxide, focusing on the physical mechanisms and leakage currents under high electric field stress conditions. Validation of the proposed method was done through experimental characterization and numerical simulations, providing insights for the development of integrated galvanic insulators for future power applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Food Science & Technology
Nouratan Singh, Poonam Rani, Neeraj Tandan, Dinesh Kumar Arya, Ansuman Mahato
Summary: An Ultra-High-Performance Liquid Chromatography (UHPLC) method was developed and validated for the analysis of 16 PAH compounds in soil samples from Manesar, India. The study found that PAH concentrations were highest in the winter season in industrial areas, while the lowest levels were observed during the monsoon season. The PAH levels in Manesar were relatively lower compared to Brazil, UK, Germany, and Korea.
JOURNAL OF MICROBIOLOGY BIOTECHNOLOGY AND FOOD SCIENCES
(2022)
Article
Physics, Applied
Luigi Balestra, Elena Gnani, Susanna Reggiani
Summary: The effective masses of electrons in ScxAl1-xN and AlxGa1-xN, two potential wide bandgap materials for power and RF electronic applications, were calculated using density functional theory (DFT). The effective band structure of the alloys was extracted using the unfolding technique. It was found that the effective masses of AlGaN approximately follow the Vegard law, while the effective masses of ScAlN exhibit a non-monotonic change as a function of Sc concentration, requiring consistent DFT calculations for accurate prediction. The effective masses of ScAlN as a function of Sc content were reported for the first time in the range of 0 <= x <= 0.25.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Computer Science, Information Systems
Luigi Balestra, Franco Ercolano, Elena Gnani, Susanna Reggiani
Summary: Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs) are excellent candidates for medium-high power and radio frequency applications. Understanding the high-field transport properties and hot-electron degradation mechanisms is crucial for device reliability. TCAD simulations provide a useful tool for this analysis.
Article
Mathematical & Computational Biology
Poonam Rani, Nouratan Singh, Monika Bhaskar, Neeraj Tandan
Summary: This study surveyed the microbial community and their antibiotic profiling in the domestic environment of rural and urban areas in Meerut city, India. The results revealed a higher bacterial load compared to fungal load, with kitchens being more contaminated than living rooms. The dominant bacteria were Pseudomonas sps, Citrobacter sps, Bacillus Subtilis, Brevundimonas diminuta, Bacillus megaterium, and Klebsiella pneumoniae. Antibiotic resistance was mainly derived from plasmids.
Article
Engineering, Electrical & Electronic
L. Balestra, S. Reggiani, A. Gnudi, E. Gnani, J. Dobrzynska, J. Vobecky
Summary: This study focuses on the application of diamond-like carbon (DLC) layer in high power devices, investigating the impact of DLC layer on diode thermal performance through measuring diode leakage current and developing a predictive TCAD model.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
L. Balestra, S. Reggiani, A. Gnudi, E. Gnani, J. Dobrzynska, J. Vobecky
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Telecommunications
Giulio E. Lancioni, Nirbhay N. Singh, Mark F. O'Reilly, Jeff Sigafoos, Gloria Alberti, Valeria Chiariello, Viviana Perilli, Francesca Campodonico
INTERNET TECHNOLOGY LETTERS
(2018)
