Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

Published 2008 View Full Article

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Title
Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 7, Pages 746-749
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-07-09
DOI
10.1109/led.2008.2000647

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