Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

出版年份 2008 全文链接

标题

作者

关键词

出版物

Volume 29, Issue 7, Pages 746-749

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-07-09

DOI

10.1109/led.2008.2000647

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