Half-Cycle Atomic Layer Deposition Reaction Study Using O[sub 3] and H[sub 2]O Oxidation of Al[sub 2]O[sub 3] on In[sub 0.53]Ga[sub 0.47]As

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors

(2008) Cheng-Wei Cheng et al.   APPLIED PHYSICS LETTERS

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

(2008) E. O’Connor et al.   APPLIED PHYSICS LETTERS

Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

(2008) A. M. Sonnet et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A