标题
Epitaxial growth of high quality AlN films on metallic aluminum substrates
作者
关键词
-
出版物
CRYSTENGCOMM
Volume 16, Issue 20, Pages 4100
出版商
Royal Society of Chemistry (RSC)
发表日期
2014-03-05
DOI
10.1039/c4ce00064a
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (111) substrates
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- Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy
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