期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 46, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/10/105101
关键词
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资金
- National Science Foundation of China [51002052]
- Key Project in Science and Technology of Guangdong Province [2011A080801018]
- Strategic Special Funds for LEDs of Guangdong Province [2011A081301010, 2011A081301012]
2 inch diameter homogeneous AlN films are epitaxially grown on sapphire substrates by pulsed laser deposition (PLD). By optimizing laser rastering and PLD growth conditions, the 2 inch diameter single-crystalline AlN films exhibit excellent thickness uniformity with root-mean-square (RMS) inhomogeneity less than 4.5% and very smooth surface with RMS roughness less than 1.53 nm. There is a maximum of 1.5 nm thick interfacial layer, if there is any, existing between the as-grown AlN and the pre-nitrided sapphire substrate, and the as-grown AlN films are almost fully relaxed only with a 0.26% in-plane compressive strain. The achievement of high-quality large-scale AlN films with uniform thickness and atomically abrupt interface is of great interest for the commercial development of AlN-based devices, particularly acoustic filters where abrupt heterointerfaces with substrates and flat surfaces for AlN films are highly desired.
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